JPH0336313B2 - - Google Patents

Info

Publication number
JPH0336313B2
JPH0336313B2 JP56179696A JP17969681A JPH0336313B2 JP H0336313 B2 JPH0336313 B2 JP H0336313B2 JP 56179696 A JP56179696 A JP 56179696A JP 17969681 A JP17969681 A JP 17969681A JP H0336313 B2 JPH0336313 B2 JP H0336313B2
Authority
JP
Japan
Prior art keywords
polycrystalline silicon
thin film
film transistor
silicon thin
resistance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56179696A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5882568A (ja
Inventor
Seiji Kumada
Kazuo Sunahara
Hideo Tanabe
Akira Misumi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP56179696A priority Critical patent/JPS5882568A/ja
Publication of JPS5882568A publication Critical patent/JPS5882568A/ja
Publication of JPH0336313B2 publication Critical patent/JPH0336313B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]

Landscapes

  • Formation Of Insulating Films (AREA)
JP56179696A 1981-11-11 1981-11-11 多結晶シリコン薄膜トランジスタおよびその製造方法 Granted JPS5882568A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56179696A JPS5882568A (ja) 1981-11-11 1981-11-11 多結晶シリコン薄膜トランジスタおよびその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56179696A JPS5882568A (ja) 1981-11-11 1981-11-11 多結晶シリコン薄膜トランジスタおよびその製造方法

Publications (2)

Publication Number Publication Date
JPS5882568A JPS5882568A (ja) 1983-05-18
JPH0336313B2 true JPH0336313B2 (en]) 1991-05-31

Family

ID=16070271

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56179696A Granted JPS5882568A (ja) 1981-11-11 1981-11-11 多結晶シリコン薄膜トランジスタおよびその製造方法

Country Status (1)

Country Link
JP (1) JPS5882568A (en])

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR950005484B1 (ko) * 1992-09-29 1995-05-24 현대전자산업주식회사 플라즈마 산화 처리를 이용한 폴리실리콘 박막트랜지스터 제조방법
CN102400091B (zh) * 2010-09-10 2014-03-26 鸿富锦精密工业（深圳）有限公司 铝合金的表面处理方法及由铝合金制得的壳体

Also Published As

Publication number Publication date
JPS5882568A (ja) 1983-05-18

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